An alloy with four constituents is a " quaternary alloy, " while a five-part alloy is termed a " quinary alloy ."
2.
The InPAsSb quaternary alloy has been grown by both OMVPE and LPE . When lattice-matched to InAs, it has a bandgap in the range 0.3 0.55 eV . The benefits of a TPV system with such a low band gap have not been studied significantly.
3.
Indium phosphide may be used as a substrate to fabricate cells with band gaps between 1.35eV and 0.74eV . Indium Phosphide has a band gap of 1.35eV . Indium gallium arsenide ( In 0.53 Ga 0.47 As ) is lattice matched to Indium Phosphide with a band gap of 0.74eV . A quaternary alloy of Indium gallium arsenide phosphide can be lattice matched for any band gap in between the two.
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